Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

• Published in: Science China Technological Sciences Vol. 53; no. 11; pp. 3002 - 3005
• Main Authors: Huang, TianMao, Chen, NuoFu, Zhang, XingWang, Bai, YiMing, Yin, ZhiGang, Shi, HuiWei, Zhang, Han, Wang, Yu, Wang, YanShuo, Yang, XiaoLi
• Format: Journal Article
• Language: English
• Published: Heidelberg SP Science China Press 01.11.2010
• Subjects: Engineering; aluminum induced crystallization; polycrystalline silicon thin film; preferred orientation
• ISSN: 1674-7321; 1862-281X
• DOI: 10.1007/s11431-010-4104-3

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al 2 O 3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al 2 O 3 , which was formed at the early stage of annealing.