Electrochemical deposition of indium: nucleation mode and diffusional limitation

• Published in: Russian journal of electrochemistry Vol. 52; no. 2; pp. 99 - 105
• Main Authors: Rakhymbay, G., Nauryzbayev, M. K., Burkitbayeva, B. D., Argimbaeva, A. M., Jumanova, R., Kurbatov, A. P., Eyraud, M., Knauth, P., Vacandio, F.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.02.2016
• Subjects: Chemistry; Chemistry and Materials Science; Electrochemistry; Physical Chemistry; indium; discharge-ionization; chloride of indium; diffusion coefficient
• ISSN: 1023-1935; 1608-3342
• DOI: 10.1134/S1023193516020087

the electrochemical deposition of indium metal from InCl 3 solutions was investigated. Cyclovoltammetric experiments showed that the initial hydrogen evolution reaction, observed together with the metal deposition on Pt surface, is blocked when the surface is covered by In. At large cathodic potentials, the current is diffusion-limited. The scan rate dependence of cyclovoltammograms allowed the determination of the diffusion coefficient of In 3+ ions, 8.18 × 10 –6 cm 2 /s, using the Delahay equation. The activation energy of diffusion, determined from the temperature dependence of cyclovoltammograms, is about 0.3 eV (23 kJ/mol). Chrono-amperometric experiments are consistent with the cyclovoltammetry; the In 3+ diffusion coefficient determined using the Cottrell law is in good agreement with the value determined by the Randles-Ševčik equation. Moreover the use of the nucleation models developed by Scharifker and Hills showed a progressive nucleation mode. Electron microscopy observations and X-ray diffraction patterns confirmed the formation of crystalline indium deposits.