Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

• Published in: Nanotechnology Vol. 17; no. 13; pp. 3129 - 3133
• Main Authors: Chung, Chen-Kuei, Wu, Bo-Hsiung
• Format: Journal Article
• Language: English
• Published: IOP Publishing 14.07.2006
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/17/13/008

A novel approach tor the formation or SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 deg C, while a few particles started to appear when the annealing temperature was increased to 700 deg C. At an annealing temperature of 900 deg C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 deg C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 deg C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 deg C. These particles grew larger at 900 deg C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper.