The effect of strain on gas–surface reactivity in group-IV heteroepitaxial systems
Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH 4 and Si 2H 6 on strained Si 1− x Ge x (0≤ x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface...
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| Published in | Chemical physics letters Vol. 292; no. 1; pp. 229 - 234 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
31.07.1998
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| Online Access | Get full text |
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| Summary: | Supersonic molecular beam techniques have been employed to examine the dissociative adsorption of GeH
4 and Si
2H
6 on strained Si
1−
x
Ge
x
(0≤
x≤1) epitaxial overlayers deposited on Si(100). Low-energy ion scattering spectrometry (LEISS) has been utilized to quantify in situ the topmost Ge surface composition of the Si
1−
x
Ge
x
films. Through the measurements of reaction probability we find that these ultrathin strained semiconducting overlayers, both alloy and pure component (i.e., Ge/Si(100)), exhibit enhanced gas–surface reactivity when compared to their bulk (relaxed) counterparts, reflecting the critical role played by strain in these epitaxial overlayers. |
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| ISSN: | 0009-2614 1873-4448 |
| DOI: | 10.1016/S0009-2614(98)00668-X |