Electronic states in semiconductor heterostructures

This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurit...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 22; no. 9; pp. 1625 - 1644
Main Authors Bastard, G., Brum, J.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.09.1986
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Dispersion
Electronics
Energy states
Exact sciences and technology
Excitons
Function approximation
Heterojunctions
Interfaces
Lattices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor impurities
Semiconductor materials
Semiconductor superlattices
Tensile stress
Quantum well
Interface electron state
Heterojunction
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Summary:This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1986.1073186