Continuous and Accurate PCRAM Current-voltage Model

In this paper, we propose a new Verilog-A current-voltage model for multi-level-cell PCRAMs. This model can describe the PCRAM operation not only in full SET and RESET states but also in the partial resistance states. And, 3 PCRAM operating regions of SET-RESET, Negative Differential Resistance,and...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 11; no. 3; pp. 162 - 168
Main Authors Jung, Chul-Moon, Lee, Eun-Sub, Min, Kyeong-Sik
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.09.2011
Subjects
전기공학
PRAMs
Phase-change RAMs
PCRAMs
Verilog-A model
unified model
multi-level-cell memories
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Summary:In this paper, we propose a new Verilog-A current-voltage model for multi-level-cell PCRAMs. This model can describe the PCRAM operation not only in full SET and RESET states but also in the partial resistance states. And, 3 PCRAM operating regions of SET-RESET, Negative Differential Resistance,and strong-ON are unified into one equation in this model thereby any discontinuity that may introduce a convergence problem cannot be found in the new PCRAM model. The percentage error between the measured data and this model is as small as 7.4% on average compared to 60.1% of the previous piecewise model. The parameter extraction which is embedded in the Verilog-A code can be done automatically. KCI Citation Count: 4
Bibliography:G704-002163.2011.11.3.007
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2011.11.3.162