Compositional transition layer in SiO2/Si interface observed by high-resolution RBS

• Published in: Applied surface science Vol. 216; no. 1-4; pp. 283 - 286
• Main Authors: KIMURA, Kenji, NAKAJIMA, Kaoru
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 30.06.2003
• Subjects: Composition; defects and impurities; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Transition layer; Thickness; RBS; High-resolution; Silicon oxides; Rutherford backscattering spectroscopy; Energy losses; Silicon; Surface composition; SiO2/Si; Energy loss straggling
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/s0169-4332(03)00386-6

The compositional transition layer in SiO2/Si(100) interface is studied with high-resolution Rutherford backscattering spectroscopy (HRBS). The HRBS spectra of thin SiO2 films on Si, which are prepared by pyrogenic oxidation, are measured at various incident angles. The spectrum shows a sharp Si surface edge and a relatively broad edge corresponding to the SiO2/Si interface. The thickness of the compositional transition layer in the SiO2/Si interface and the energy loss straggling are determined simultaneously from the observed spectra. The obtained thickness of the transition layer is 0.53 #+ 0.08 nm. The obtained energy loss straggling agrees with the empirical formula given by Yang et al.