EMI protection elements on cadmium telluride thin films

• Published in: IOP conference series. Materials Science and Engineering Vol. 459; no. 1; pp. 12009 - 12013
• Main Authors: Kirichenko, M V, Krypunov, G S, Khrypunov, M G, Zaitsev, R V, Drozdov, A N
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.12.2018
• Subjects: Cadmium telluride; Cadmium tellurides; Columnar structure; Intermetallic compounds; Switching; Thickness; Thin films
• ISSN: 1757-8981; 1757-899X; 1757-899X
• DOI: 10.1088/1757-899X/459/1/012009

The amplitude-time characteristics of cadmium telluride thin films switching were investigated at the influence of single impulses duration 1 μs. It has been founded that with an increase of cadmium telluride layer thickness from 3 μm up to 8 μm, an increase of the operating threshold from 70 V to 105 V is es-tablished. The maximum residual sample voltage was change in the range from 12 V to 40 V, the minimum - from 5 V to 20 V. Samples switching time was no more than 2 nanoseconds; the samples interelectrode capacity does not exceed 2 pF. All test samples were operated without failure up to 20 times. Based on the results of cadmium telluride films structural studies by X-ray diffractometry and scanning electron microscopy we proposed a mechanism of cadmium telluride films with columnar structure monostable switching based on the formation of melted high-conductivity channels in cadmium tel-luride grains oriented in the [111] direction.