Schottky Diode Derating for Survivability in a Heavy Ion Environment
In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical p...
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Published in | IEEE transactions on nuclear science Vol. 62; no. 6; pp. 2482 - 2489 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Goddard Space Flight Center
IEEE
01.12.2015
Institute of Electrical and Electronics Engineers (IEEE) The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures. |
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Bibliography: | GSFC Goddard Space Flight Center |
ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2015.2498106 |