Schottky Diode Derating for Survivability in a Heavy Ion Environment

• Published in: IEEE transactions on nuclear science Vol. 62; no. 6; pp. 2482 - 2489
• Main Authors: Casey, Megan C., Lauenstein, Jean-Marie, Ladbury, Raymond L., Wilcox, Edward P., Topper, Alyson D., LaBel, Kenneth A.
• Format: Journal Article
• Language: English
• Published: Goddard Space Flight Center IEEE 01.12.2015; Institute of Electrical and Electronics Engineers (IEEE); The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Defects; diodes; Electronics And Electrical Engineering; heavy ion testing; heavy ions; Radiation effects; radiation effects in devices; Radiation hardening (electronics); radiation hardness assurance; radiation hardness assurance testing; Schottky diodes; semiconductor device radiation effects; Silicon; single-event burnout; single-event charge collection; single-event effects; Space Radiation; Schottky Diodes; Radiation Effects In Devices; Radiation Hardness Assurance; Radiation Hardness Assurance Testing; Single-Event Burnout; Single-Event Charge Collection; Diodes; Semiconductor Device Radiation Effects; Defects; Single-Event Effects; Radiation Effects; Silicon; Heavy Ions; Heavy Ion Testing
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2015.2498106

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.