Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation

• Published in: Semiconductor science and technology Vol. 39; no. 1; pp. 15006 - 15012
• Main Authors: An, Do Gyun, Kim, Garam, Kim, Hyunwoo, Kim, Sangwan, Kim, Jang Hyun
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.01.2024
• Subjects: gate-all-around FET; high temperature; junctionless; nanosheet-FET (nsFET); self-heating effect (SHE); thermal characteristics; zero-temperature coefficient (ZTC)
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/1361-6641/ad10c4

Artificial intelligence computing requires hardware like central processing units and graphic processing units for data processing. However, excessive heat generated during computations remains a challenge. The paper focuses on the heat issue in logic devices caused by transistor structures. To address the problem, the operational mechanism of the Junctionless Field-Effect Transistor (JLFET) is investigated. JLFET shows potential in mitigating heat-related issues and is compared to other nanosheet (ns) FETs. In the case of JL-nsFET, the change in mobility with increasing temperature is smaller compared to Con-nsFET, resulting in less susceptibility to lattice scattering and thermal resistance ( R th) in self-heating effect situation is 0.43 [K µ W −1 ] for Con-nsFET and 0.414 [K µ W −1 ] for JL-nsFET. The reason why the R th of JL-nsFET is smaller than that of Con-nsFET is that JL-nsFET uses a source heat injection conduction mechanism and a large heat transfer area by using a bulk channel.