High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

• Published in: Chinese physics B Vol. 32; no. 3; pp. 38503 - 676
• Main Authors: Jiang, Junkai, Chang, Faran, Zhou, Wenguang, Li, Nong, Chen, Weiqiang, Jiang, Dongwei, Hao, Hongyue, Wang, Guowei, Wu, Donghai, Xu, Yingqiang, Niu, Zhi-Chuan
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.03.2023; Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China; College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China; State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China%State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
• Subjects: infrared; photodetectors; superlattices; photodetectors; infrared; superlattices
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/acaa2e

High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of ∼ 2.1 μm as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 μm-thick absorption region. The dark current density of 1.03 × 10 −3 A/cm 2 is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity ( D *) of 3.29 × 10 10 cm⋅Hz 1/2 /W (at a peak responsivity of 2.0 μm) under –50 mV applied bias.