Transport and percolation in a low-density high-mobility two-dimensional hole system

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence (...

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Published inPhysical review letters Vol. 99; no. 23; p. 236402
Main Authors Manfra, M J, Hwang, E H, Das Sarma, S, Pfeiffer, L N, West, K W, Sergent, A M
Format Journal Article
LanguageEnglish
Published United States 07.12.2007
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Summary:We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.99.236402