Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities a...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 21; no. 7; pp. 477 - 479
Main Authors Lee, Ko-Tao, Lee, Yeeu-Chang, Chang, Jenq-Yang, Gong, Jeng
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2009
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Absorption
Conferences
Electrodes
Electroluminescence (EL)
Etching
Fiber optics
Gallium nitride
III-V semiconductor materials
laser scribe
Lasers
Light emitting diodes
light-emitting diode (LED)
Luminous intensity
mesh-texture
Optical device fabrication
Optical fibers
Optical properties
Optical scattering
Quantum well devices
Surface emitting lasers
Trenches
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Summary:The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.
Bibliography:ObjectType-Article-2
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SourceType-Conference Papers & Proceedings-2
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2013726