Beam tests of a double-sided silicon strip detector with fast binary readout electronics before and after proton-irradiation

A double-sided silicon strip detector with a radiation-tolerant design was fabricated and characterized in a sequence of beam tests at KEK using 4 GeV/ c pions. The detectors were combined with newly designed, fast, lower power, bipolar amplifier-shaper-discriminator chips and CMOS digital pipeline...

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Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 383; no. 1; pp. 211 - 222
Main Authors Unno, Y., Takahata, M., Maeohmichi, H., Hinode, F., Akagi, T., Aso, T., Daigo, M., DeWitt, J., Dorfan, D., Dubbs, T., Frautschi, M., Grillo, A., Haber, C., Handa, T., Hatakenaka, T., Hubbard, B., Iwasaki, H., Iwata, Y., Kaplan, D., Kashigin, S., Kipnis, I., Kobayashi, S., Kohriki, T., Kondo, T., Kroeger, W., Matthews, J., Miyata, H., Murakami, A., Noble, K., O'Shaughnessy, K., Ohmoto, T., Ohsugi, T., Ohyama, H., Pulliam, T., Rahn, J., Rowe, W.A., Sadrozinski, H.F.-W., Seiden, A., Siegrist, J., Spencer, E., Spieler, H., Takashima, R., Tamura, N., Terada, S., Tezuka, M., Webster, A., Wichmann, R., Wilder, M., Yoshikawa, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.1996
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Summary:A double-sided silicon strip detector with a radiation-tolerant design was fabricated and characterized in a sequence of beam tests at KEK using 4 GeV/ c pions. The detectors were combined with newly designed, fast, lower power, bipolar amplifier-shaper-discriminator chips and CMOS digital pipeline chips to record hit-no hit signals in the strips. Efficiencies, noise occupancies, and spatial resolutions were measured before and after the proton irradiation at an equivalent fluence of 1 × 10 14 p/cm 2, depending on angle of track incidence and strip-pitches. The median pulse height distribution, derived from the threshold scans of the efficiency, allowed to extract the response of the detector. A 1 T magnetic field enabled us to determine the Hall mobilities of electrons and holes.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(96)00670-5