Freestanding Alumina Membrane by Double-Layer Anodization
A novel method has been developed for fabricating full or partial freestanding anodic alumina. In our method a sacrificial metal layer is introduced between an Al film and a Si 3 N 4 substrate. A freestanding alumina film at wafer scale is successfully achieved by anodizing the double metal layer, d...
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Published in | IEEE transactions on nanotechnology Vol. 6; no. 3; pp. 328 - 333 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.05.2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A novel method has been developed for fabricating full or partial freestanding anodic alumina. In our method a sacrificial metal layer is introduced between an Al film and a Si 3 N 4 substrate. A freestanding alumina film at wafer scale is successfully achieved by anodizing the double metal layer, during which the alumina is spontaneously stripped off the Si 3 N 4 substrate due to the anodic oxidation of the sacrificial layer. The barrier oxide of the alumina film is effectively removed either by H 3 PO 4 dissolution or by CF 4 reactive ion etching. The freestanding alumina film is utilized as a contact mask to transfer its nanoporous pattern to a Si substrate. By patterning the sacrificial metal layer with contact lithography, a partial freestanding alumina film is successfully achieved on the silicon chip, producing a unique micro/nanofluidic channel. Compared with previous techniques, the method reported here is advantageous for its simplicity and flexibility |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1536-125X 1941-0085 |
DOI: | 10.1109/TNANO.2007.894870 |