Facilitate Measurement of Electrochemical Reactions in Redox‐Based Memristors by Simply Thickening the Electrolyte Layer

• Published in: Physica status solidi. PSS-RRL. Rapid research letters Vol. 12; no. 5
• Main Authors: Jamilpanah, Loghman, Mohseni, Seyed Majid
• Format: Journal Article
• Language: English
• Published: Berlin WILEY?VCH Verlag Berlin GmbH 01.05.2018; Wiley Subscription Services, Inc
• Subjects: Chemical reactions; cyclic voltammetry; Electric potential; Electrolytes; Memristors; Metallizing; Oxidation; Platinum; Redox reactions; Silver; Solid electrolytes; Switching; Thickening
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.201800046

Redox reactions at the metal/electrolyte interface are the basis of electrochemical metallization memristors that can be understood through cyclic voltammetry (CV). However, voltage limitation during the CV measurements that prevents the resistance switching has limited full understanding of the redox reactions. We apply a thickened ≈20 μm graphene oxide (GO) electrolyte layer in a memristor structure and show that all redox reactions can be determined through CV measurements without resistance switching by sweeping the voltage up to high values. We are able to unhide details of Ag redox reactions (Agz+/Ag) utilizing a GO thick layer as the solid electrolyte in Pt/GO/Ag cell structure. The results are fundamentally valuable for designing methods to uncover the memristive mechanisms of memristors. The low thickness of solid electrolytes in memristors hinders usage of the cyclic voltammetry study method of them due to fast switching of the resistance. The authors suggest using a thick layer to overcome this problem.