Large-Signal Response of Semiconductor Quantum-Dot Lasers

• Published in: IEEE journal of quantum electronics Vol. 46; no. 12; pp. 1755 - 1762
• Main Authors: Lüdge, Kathy, Aust, R, Fiol, G, Stubenrauch, M, Arsenijević, D, Bimberg, D, Schöll, Eckehard
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Augers; Current carriers; Devices; Dynamic response; Dynamic temperature; Dynamic tests; Dynamics; Exact sciences and technology; eye diagrams; Fundamental areas of phenomenology (including applications); large-signal response; Laser excitation; Laser modes; Lasers; Mathematical model; Measurement by laser beam; Optics; Physics; Pump lasers; Quantum dot lasers; quantum-dot laser; Qunatum dots; Semiconductor lasers; laser diodes; Semiconductors; Quantum dot lasers; Semiconductor lasers; Temperature effects; large-signal response; Eye diagram; Dynamic temperature; quantum-dot laser; Auger recombination; eye diagrams
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2010.2066959

In this paper, the large-signal response of a quantum-dot laser is investigated. Based on experimental results, we show that including a dynamic device temperature as well as Auger recombination processes in the carrier reservoir is crucial to model the dynamic response of a quantum-dot laser for large variations of the pump current. A detailed analysis of the influence of temperature effects on the dynamics of the device is performed. Simulated eye diagrams are presented and compared with experimental results at the emission wavelength of 1.3 μm.