Ultrahigh on/off -Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)-Poly(Styrenesulfonate) Stacking Bilayer

• Published in: IEEE electron device letters Vol. 32; no. 3; pp. 387 - 389
• Main Authors: Lai, Pei Ying, Chen, Jen-Sue
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS; Aluminum; Applied sciences; C (programming language); Cross-disciplinary physics: materials science; rheology; Current measurement; Data storage; Design. Technologies. Operation analysis. Testing; Electrodes; Electronics; Exact sciences and technology; Gold; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetic and optical mass memories; Materials science; Memory devices; Nanoparticle (NP); Nanoparticles; Nanoscale materials and structures: fabrication and characterization; organic memory; Other topics in nanoscale materials and structures; Performance evaluation; Physics; poly; poly(N-vinylcarbazole) (PVK); Polymers; resistive memory; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stacking; Storage and reproduction of information; Switches; High strength current; Memory devices; Polymer blends; Stacking; Nanoparticle; Active layer; resistive memory; Carbazole(vinyl) polymer; 4-ethylenedioxythiophene-poly(styrenesulfonate) (PEDOT―PSS); poly(N-vinylcarbazole) (PVK); Thiophene derivative polymer; Non volatile memory; Nanoparticle (NP); organic memory; Integrated circuit; Styrenesulfonate polymer; poly3; Bilayers; Organic electronics
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2099102

An ultrahigh ON/OFF-current ratio of 5 × 10 9 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the ON/OFF-current ratio cannot be achieved by simply increasing the thickness of the PVK: Au NPs layer itself. This PVK:Au-NPs/PEDOT-PSS stacking-bilayer memory device also demonstrates good retention of high ON/OFF-current ratio for at least 2 h and remains programmable at 125°C.