Elucidation of Electrical and Optical Parameters of Poly(o-anthranilic acid)-poly(o-amino phenol)/Copper Oxide Nanocomposites Thin Films

• Published in: Journal of inorganic and organometallic polymers and materials Vol. 28; no. 6; pp. 2572 - 2583
• Main Authors: Al-Hossainy, A. F., Bassyouni, M., Zoromba, M. Sh
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.11.2018; Springer Nature B.V
• Subjects: Chemical synthesis; Chemistry; Chemistry and Materials Science; Copper; Copper oxides; Inorganic Chemistry; Magnetism; Mixtures; Morphology; Nanocomposites; Nanoparticles; Optoelectronic devices; Organic Chemistry; Parameters; Phenols; Photonic band gaps; Polyaminophenol; Polymer matrix composites; Polymer Sciences; Potassium dichromate; Thermal decomposition; Thin films; Poly; Nanocomposite; anthranilic acid; Dielectric relation; aminophenol; Copper oxide nanoparticles
• ISSN: 1574-1443; 1574-1451
• DOI: 10.1007/s10904-018-0945-1

Copper oxide nanoparticles (CuO-NPs) are prepared based on thermal decomposition method. Polyanthranilic acid (PANA) and poly- o- aminophenol (POAP) are synthesized based on the oxidative polymerization in aqueous medium with potassium dichromate. Thin films are fabricated from PANA/POAP blends and composites of PANA/POAP with 0.25 and 0.40 wt% of CuO-NPs. The resulting thin films are characterized by different techniques such as XRD, SEM and UV–Vis absorption measurements. Surface morphology displays a good level of CuO-NPs distribution in POAP/PANA blends at 0.25 wt%. Initial agglomeration detects at 0.4 wt% concentration of CuO-NPs. It is found that the real dielectric constant (ε real ) increases with increasing CuO-NPs content. Transmittance of PANA improves up to 95% in the presence of 50 wt% POAP. I–V characteristics of the PANA/POAP blend and nanocomposite films show a non-ohmic behavior. The obtained results indicate that the poly( o -anthranilic acid)-poly( o -amino phenol)/copper oxide nanocomposites thin film is a good candidate in optoelectronic devices based on its band gap and dispersion parameters.