A ZnO nanowire-based photo-inverter with pulse-induced fast recovery

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the...

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Bibliographic Details
Published inNanoscale Vol. 5; no. 22; pp. 10829 - 10834
Main Authors Raza, Syed Raza Ali, Lee, Young Tack, Hosseini Shokouh, Seyed Hossein, Ha, Ryong, Choi, Heon-Jin, Im, Seongil
Format Journal Article
LanguageEnglish
Published England 21.11.2013
Subjects
Electric potential
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Recovery
Trapping
Voltage
Zinc oxide
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Summary:We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.
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ISSN:2040-3364
2040-3372
DOI:10.1039/c3nr03801g