Calixarene electron beam resist for nano-lithography

New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 µ C/cm 2 to 7 mC/cm 2 . High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 36; no. 12B; pp. 7769 - 7772
Main Authors FUJITA, J.-I, OHNISHI, Y, MANAKO, S, OCHIAI, Y, NOMURA, E, SAKAMOTO, T, MATSUI, S
Format Conference Proceeding Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.12.1997
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Resist
Microelectronic fabrication
Calixarene
Electron beam lithography
Nanotechnology
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Summary:New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 µ C/cm 2 to 7 mC/cm 2 . High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our results suggest that the resolution limit of calixarene resists is dominated by a development process such as adhesion to a substrate rather than by the EB profile. Calixarene resists are resistant to etching by halide plasma. We also demonstrated nanoscale devices processed by using calixarene resists. Calixarene resists are promising materials for nanofabrication.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.7769