Calixarene electron beam resist for nano-lithography
New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 µ C/cm 2 to 7 mC/cm 2 . High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our...
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Published in | Japanese Journal of Applied Physics Vol. 36; no. 12B; pp. 7769 - 7772 |
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Main Authors | , , , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.12.1997
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Subjects | |
Online Access | Get full text |
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Summary: | New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 µ C/cm
2
to 7 mC/cm
2
. High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our results suggest that the resolution limit of calixarene resists is dominated by a development process such as adhesion to a substrate rather than by the EB profile. Calixarene resists are resistant to etching by halide plasma. We also demonstrated nanoscale devices processed by using calixarene resists. Calixarene resists are promising materials for nanofabrication. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.36.7769 |