Composition, Structure, and Dielectric Characteristics of (Sr0.5Ba0.5)Nb2O6/Pt(111)/Si(001) Films

• Published in: Inorganic materials Vol. 55; no. 2; pp. 167 - 172
• Main Authors: Pavlenko, A. V., Kudryavtsev, Yu. A., Stryukov, D. V., Anokhin, A. S., Kovtun, A. P., Sevast’yanov, B. Ya
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.02.2019; Springer Nature B.V
• Subjects: Chemistry; Chemistry and Materials Science; Composition; Crystal lattices; Crystal structure; Crystals; Dielectric properties; Dynamic structural analysis; Ferroelectric materials; Ferroelectricity; Film thickness; Industrial Chemistry/Chemical Engineering; Inorganic Chemistry; Materials Science; Platinum; Relaxors; Silicon substrates; Single crystals; Transition layers; Unit cell; X-ray diffraction; ferroelectrics; dielectric permittivity; mass spectrometry; thin films
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168519020109

— Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN) relaxor ferroelectric films of different thicknesses have been grown on Pt(111)/Si(001) substrates by rf sputtering. We have studied their structure, composition–depth profiles, lattice dynamics, and dielectric properties at temperatures from 25 to 200°C. The results demonstrate that the composition of the films does not vary with depth and corresponds to that of the ceramic target used and that the SBN/Pt interface has a transition layer more than 30 nm in thickness, consisting of a mixture of platinum and SBN. According to X-ray diffraction characterization results, the films are polycrystalline, with a preferential orientation of the SBN [001] axis along the normal to the substrate surface. At a film thickness of 950 nm or above, the SBN films on Pt(111)/Si substrates differ insignificantly in unit-cell parameters, lattice dynamics, and Burns temperature from SBN single crystals. We discuss general relationships of structure formation and characteristics of the films.