Electrical and optical properties of point-contacted a-Si: H/c-Si heterojunction solar cells with patterned SiO2 at the interface

• Published in: Solar energy materials and solar cells Vol. 91; no. 14; pp. 1366 - 1370
• Main Authors: OK, Young-Woo, SEONG, Tae-Yeon, KIM, Donghwan, KIM, Sang-Kyun, JEONG CHUL LEE, KYUNG HOON YOON, JINSOO SONG
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 06.09.2007
• Subjects: Applied sciences; Energy; Exact sciences and technology; Natural energy; Photovoltaic conversion; Solar cells. Photoelectrochemical cells; Solar energy; Silicon solar cells; Point contact; Short circuit currents; Electrical properties; Shunt; Electrical conduction; Quantum yield; Open circuit voltage; Crystalline material; Charge carrier recombination; Optical properties; Amorphous Si; Optical characteristic; Leakage current; Crystalline Si; Electrical characteristic; Heterojunction; Passivation
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2007.04.013

We report on the electrical and optical characteristics of a-Si:H/c-Si heterojunction solar cells with point-contact junction via patterned SiO2 layer at the interface. The new structure showed improved electrical properties, having a smaller leakage current and a larger shunt resistance. The electrical conduction of the point-contacted samples followed the diffusion dominant process with bulk recombination, but the control samples without SiO2 showed the space-charge region recombination dominant process. The point-contacted samples showed increased internal quantum efficiency in the bulk region, but decreased internal quantum efficiency in the surface region. As the distance between the holes decreased, the point-contacted solar cells showed an improved efficiency with a larger fill-factor but smaller open-circuit voltage and short-circuit current.