On the Dual Basis for Solving Electromagnetic Surface Integral Equations
A powerful technique for solving electromagnetic (EM) surface integral equations (SIEs) for inhomogenous objects by the method of moments (MoM) involves the well-known Rao-Wilton-Glisson (RWG) basis function to represent the electric current and, for field orthogonality and numerical stability reaso...
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Published in | IEEE transactions on antennas and propagation Vol. 57; no. 10; pp. 3136 - 3146 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.10.2009
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A powerful technique for solving electromagnetic (EM) surface integral equations (SIEs) for inhomogenous objects by the method of moments (MoM) involves the well-known Rao-Wilton-Glisson (RWG) basis function to represent the electric current and, for field orthogonality and numerical stability reasons, a variation of the RWG basis known as the ntilde X RWG basis (where ntilde is a unit normal vector at the object surface) to represent the magnetic current. Though this combination provides a numerically efficient and effective solution that has been demonstrated on a variety of structures, one cannot feel entirely comfortable because of the presence of fictitious magnetic current associated with the modified basis. Chen and Wilton proposed a different, smoother basis in 1990 that avoids the fictitious line charges, but because of computational cost issues it has not been used beyond Chen's dissertation. Recently, this basis was rediscovered and has received considerable attention. Our work reexamines the dual basis, exploring issues not addressed by Chen and Wilton and showing accurate solutions for a variety of EM scattering structures. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-926X 1558-2221 |
DOI: | 10.1109/TAP.2009.2028622 |