1,2-Dihydroxyanthraquinone: Synthesis, and induced changes in the structural and optical properties of the nanostructured thin films due to γ-irradiation

• Published in: Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy Vol. 206; pp. 466 - 473
• Main Authors: El-ghandour, A., Awed, A.S., Abdel Maksoud, M.I.A., Nasher, M.A.
• Format: Journal Article
• Language: English
• Published: England Elsevier B.V 05.01.2019
• Subjects: Alizarin NPs; Energy gap; Gamma irradiation; Optical conductivity; Particle size; Gamma irradiation; Particle size; Energy gap; Alizarin NPs; Optical conductivity
• ISSN: 1386-1425; 1873-3557
• DOI: 10.1016/j.saa.2018.08.045

1,2‑Dihydroxyanthraquinone (Alizarin-AZ) is available, low-cost organic compound. Besides, AZ has multiple applications owing to its drawing attention photoactivity. This paper is devoted to study the influence of Gamma irradiation on the morphology, optical, and dielectric properties of AZ nanostructured thin films. Nanostructure powder of Alizarin is synthesized according to chemical routes. Subsequently, thin films of AZ are fabricated via thermal evaporator. The bared thin film is irradiated at different doses of 60Co γ-rays. Furthermore, the bared and irradiated films are characterized via X-ray diffraction (XRD), atomic force microscope (AFM) and UV–Vis-NIR spectroscopy. XRD investigations reveal that the bared film has a nanostructure and the average particle size increases gradually as the γ-irradiation dose increases. AFM images show remarkable increment in the surface roughness of the irradiated film over the bared one. In the light of structure induced changes, clear variations in the optical properties are addressed. Of these, the energy gap decreases gradually as the irradiation dose increases. The film irradiated at 45 kGy shows the highest optical conductivity. Based on our results we suggest AZ nanostructured thin films as potential candidate for optoelectronics devices. [Display omitted] •AZ nanostructure powder is successfully synthesized and deposited into thin films.•Particle size and surface roughness of AZ thin films increased as γ-irradiation dose increased.•Energy gap decreased from 2.19 eV to 2.08 eV upon irradiation at 45 kGy.•Gamma irradiated AZ thin films show high absorption and optical conductivity (104 Ω-1 m-1).