A Physics-Based Compact Model for Polysilicon Resistors

• Published in: IEEE electron device letters Vol. 31; no. 11; pp. 1251 - 1253
• Main Authors: Spessot, Alessio, Molteni, Mario, Ventrice, Domenico, Fantini, Paolo
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Compact modeling; Conductivity; Devices; Dopants; Doping; Electrical resistivity; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; electrothermal modeling; Exact sciences and technology; Grain size; Mathematical models; Modulation; polysilicon; resistor; Resistors; Semiconductor process modeling; Silicon; Thermal resistance; Transport; Grain size; Potential barrier; Impurity density; Thermal behavior; Polycrystal; Temperature effect; Compact design; polysilicon; Modeling; Grain boundary; electrothermal modeling; Compact modeling; Self heating; Silicon; Resistor
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2066255

A physics-based compact model describing the electrothermal behavior of polysilicon resistors considering both the roles of the grain-boundary potential barriers and the transport inside the silicon decananocrystallites is presented. The model accurately captures the resistivity modulation as a function of temperature, dopant concentration, and grain size, including also the self-heating-induced nonlinear effects in the current-voltage relationship. An accurate agreement of the model against the experimental characterization is reported.