Effect of Precursor on the Dielectric Properties of Diamond-Like Silicon–Carbon Films

— We report results on frequency and temperature dependences of dielectric properties (dielectric permittivity and dielectric loss tangent) of amorphous silicon–carbon films produced using different precursors: poly(phenylmethylsiloxane) (PPMS) and poly(methylsiloxane) (PMS). It has been shown that...

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Bibliographic Details
Published inInorganic materials Vol. 56; no. 8; pp. 799 - 808
Main Authors Barinov, A. D., Gurinovich, T. D., Popov, A. I., Chukanova, T. S., Shapetina, M. A., Shupegin, M. L.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.08.2020
Springer Nature B.V
Subjects
Amorphous silicon
Chemistry
Chemistry and Materials Science
Diamond-like carbon films
Dielectric loss
Dielectric properties
Dielectric strength
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Precursors
dielectric permittivity
silicon–carbon films
absorption current
polar dielectric
dielectric loss tangent
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Summary:— We report results on frequency and temperature dependences of dielectric properties (dielectric permittivity and dielectric loss tangent) of amorphous silicon–carbon films produced using different precursors: poly(phenylmethylsiloxane) (PPMS) and poly(methylsiloxane) (PMS). It has been shown that the PPMS-based films consist of a well-defined polar dielectric, whereas the PMS-based films consist of a weakly polar dielectric. At the same time, their high-frequency dielectric permittivities differ relatively little (4.9 and 4.4, respectively, at 300 K and 1 MHz). We analyze the dielectric properties of the films as functions of frequency and temperature and in relation to the nature of the precursor.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168520080026