Fast and Digitally Wavelength-Tunable Semiconductor Ring Laser Using a Monolithically Integrated Distributed Bragg Reflector
We report on a semiconductor ring laser that uses a monolithically integrated external distributed Bragg reflector section to achieve fast and digital wavelength tuning. Switching times of 450 ps and a sidemode suppression ratio exceeding 30 dB were measured.
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Published in | IEEE photonics technology letters Vol. 20; no. 23; pp. 1926 - 1928 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.12.2008
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We report on a semiconductor ring laser that uses a monolithically integrated external distributed Bragg reflector section to achieve fast and digital wavelength tuning. Switching times of 450 ps and a sidemode suppression ratio exceeding 30 dB were measured. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2008.2005000 |