Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes

• Published in: Journal of physics. D, Applied physics Vol. 51; no. 15; pp. 155103 - 155113
• Main Authors: Gîrgel, I, Šatka, A, Priesol, J, Coulon, P-M, Le Boulbar, E D, Batten, T, Allsopp, D W E, Shields, P A
• Format: Journal Article
• Language: English
• Published: IOP Publishing 18.04.2018
• Subjects: cathodoluminescence; core-shell; doping; EBIC; nanorod; p-GaN
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/aab16b

III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance-voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core-shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core-shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core-shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.