The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors
The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ VT in a-I...
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Published in | IEEE electron device letters Vol. 32; no. 10; pp. 1388 - 1390 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.10.2011
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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