The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors
The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ VT in a-I...
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Published in | IEEE electron device letters Vol. 32; no. 10; pp. 1388 - 1390 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.10.2011
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ VT in a-IGZO TFT with a thinner T IGZO is larger than that with a thicker T IGZO . Based on the simulation result with the subgap DOS model, it is concluded that the T IGZO -dependent Δ VT is originated from the accelerated creation of shallow donor states due to a higher surface electric field in a-IGZO TFTs with a thinner T IGZO . |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2011.2161746 |