The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors
The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ VT in a-I...
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Published in | IEEE electron device letters Vol. 32; no. 10; pp. 1388 - 1390 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
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New York, NY
IEEE
01.10.2011
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ VT in a-IGZO TFT with a thinner T IGZO is larger than that with a thicker T IGZO . Based on the simulation result with the subgap DOS model, it is concluded that the T IGZO -dependent Δ VT is originated from the accelerated creation of shallow donor states due to a higher surface electric field in a-IGZO TFTs with a thinner T IGZO . |
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AbstractList | The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Δ VT in a-IGZO TFT with a thinner T IGZO is larger than that with a thicker T IGZO . Based on the simulation result with the subgap DOS model, it is concluded that the T IGZO -dependent Δ VT is originated from the accelerated creation of shallow donor states due to a higher surface electric field in a-IGZO TFTs with a thinner T IGZO . The effect of the active layer thickness ( T rm IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift ( Delta V T ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative Delta V T in a-IGZO TFT with a thinner T rm IGZO is larger than that with a thicker T rm IGZO . Based on the simulation result with the subgap DOS model, it is concluded that the T rm IGZO -dependent Delta V T is originated from the accelerated creation of shallow donor states due to a higher surface electric field in a-IGZO TFTs with a thinner T rm IGZO . The effect of the active layer thickness [Formula Omitted] on the negative bias stress (NBS)-induced threshold voltage shift [Formula Omitted] in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states (DOS) model. The NBS-induced negative [Formula Omitted] in a-IGZO TFT with a thinner [Formula Omitted] is larger than that with a thicker [Formula Omitted]. Based on the simulation result with the subgap DOS model, it is concluded that the [Formula Omitted]-dependent [Formula Omitted] is originated from the accelerated creation of shallow donor states due to a higher surface electric field in a-IGZO TFTs with a thinner [Formula Omitted]. |
Author | Yongsik Kim Dong Myong Kim Hyun-Kwang Jung Minkyung Bae Yong Woo Jeon Sungchul Kim Dae Hwan Kim Dongsik Kong |
Author_xml | – sequence: 1 givenname: Dongsik surname: Kong fullname: Kong, Dongsik – sequence: 2 givenname: Hyun-Kwang surname: Jung fullname: Jung, Hyun-Kwang – sequence: 3 givenname: Yongsik surname: Kim fullname: Kim, Yongsik – sequence: 4 givenname: Minkyung surname: Bae fullname: Bae, Minkyung – sequence: 5 givenname: Yong Woo surname: Jeon fullname: Jeon, Yong Woo – sequence: 6 givenname: Sungchul surname: Kim fullname: Kim, Sungchul – sequence: 7 givenname: Dong Myong surname: Kim fullname: Kim, Dong Myong – sequence: 8 givenname: Dae Hwan surname: Kim fullname: Kim, Dae Hwan |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24708019$$DView record in Pascal Francis |
BookMark | eNpdkbFvEzEUhy1UJNLCjsRiISGxXHjP9tl3Y2jTNlJEB8LCcnIcm7hcfMF2kDLzj-Nrog6dLOv73k_P_l2SizAES8h7hCkitF-W85spA8QpQ4lKyFdkgnXdVFBLfkEmoARWHEG-IZcpPQKgEEpMyL_V1tK5c9ZkOjiay21msv9r6VIfbaSrrTe_g02JDuGJfrO_9BP_6nWi33MsrFqEzcHYDV2ElPXa9z4fqQ90thvifjscUgF3-md4GONCdev7HV1FHZJPeYjpLXntdJ_su_N5RX7czlfX99Xy4W5xPVtWhtc8V1K37VooJTZgQLXlYYzLRggpmZGu5sqiAIeab7QAbSQ0ayUFsnVtBWPO8Svy-ZS7j8Ofg0252_lkbN_rYMuSHUqFHFTTtEX9-EJ9HA4xlO26FjkyyepRgpNk4pBStK7bR7_T8dghdGMpXSmlG0vpzqWUkU_nXJ2M7l35BOPT8xwTChrAMfrDyfPW2mcsAVkNNf8PzEuVMg |
CODEN | EDLEDZ |
CitedBy_id | crossref_primary_10_1109_TED_2012_2208971 crossref_primary_10_1002_pssa_201800621 crossref_primary_10_1051_epjap_2015150375 crossref_primary_10_1063_1_4914296 crossref_primary_10_1109_TED_2017_2755098 crossref_primary_10_1109_LED_2011_2181969 crossref_primary_10_1109_TED_2022_3153273 crossref_primary_10_1007_s11664_023_10386_x crossref_primary_10_1002_pssa_201900773 crossref_primary_10_1002_adfm_201802717 crossref_primary_10_1016_S1875_5372_16_30160_6 crossref_primary_10_1039_D3TC00417A crossref_primary_10_1109_TED_2018_2844862 crossref_primary_10_1116_1_4916626 crossref_primary_10_3934_matersci_2020_5_596 crossref_primary_10_1007_s11664_012_2425_7 crossref_primary_10_3390_app7090885 |
Cites_doi | 10.1889/1.3256478 10.1002/pssc.200779300 10.1109/LED.2009.2039634 10.1889/1.3069740 10.1143/JJAP.48.100202 10.1063/1.2963978 10.1143/JJAP.50.024104 10.1109/LED.2008.2006637 10.1063/1.3464964 10.1109/TED.2010.2072926 10.1021/jp1038305 10.1109/IEDM.2009.5424389 10.1002/adfm.200801032 10.1149/1.2978961 10.1063/1.3510471 |
ContentType | Journal Article |
Copyright | 2015 INIST-CNRS Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2011 |
Copyright_xml | – notice: 2015 INIST-CNRS – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2011 |
DBID | 97E RIA RIE IQODW AAYXX CITATION 7SP 8FD L7M F28 FR3 |
DOI | 10.1109/LED.2011.2161746 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE/IET Electronic Library (IEL) Pascal-Francis CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Engineering Research Database |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Engineering Research Database ANTE: Abstracts in New Technology & Engineering |
DatabaseTitleList | Engineering Research Database Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Applied Sciences |
EISSN | 1558-0563 |
EndPage | 1390 |
ExternalDocumentID | 2550356591 10_1109_LED_2011_2161746 24708019 6012505 |
Genre | orig-research |
GroupedDBID | -~X .DC 0R~ 29I 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACIWK ACNCT AENEX AETIX AFFNX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD HZ~ IBMZZ ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RIG RNS TAE TN5 TWZ VH1 XFK 08R IQODW AAYXX CITATION 7SP 8FD L7M F28 FR3 |
ID | FETCH-LOGICAL-c353t-6a99b4774d0c079056236844662c6f537e140f1a3da40ac608b76412b5e422ff3 |
IEDL.DBID | RIE |
ISSN | 0741-3106 |
IngestDate | Fri Aug 16 21:59:02 EDT 2024 Thu Oct 10 18:24:07 EDT 2024 Fri Aug 23 01:29:46 EDT 2024 Sun Oct 22 16:04:33 EDT 2023 Wed Jun 26 19:20:10 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 10 |
Keywords | Surface field Voltage threshold Amorphous material Density of states density-of-states (DOS) negative bias stress (NBS)-induced instability Electric stress Active layer Active layer thickness amorphous InGaZnO (a-IGZO) TFTs Electric field Stress effects Thin film transistor |
Language | English |
License | CC BY 4.0 |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c353t-6a99b4774d0c079056236844662c6f537e140f1a3da40ac608b76412b5e422ff3 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
PQID | 913126259 |
PQPubID | 85488 |
PageCount | 3 |
ParticipantIDs | proquest_miscellaneous_1671307889 ieee_primary_6012505 crossref_primary_10_1109_LED_2011_2161746 proquest_journals_913126259 pascalfrancis_primary_24708019 |
PublicationCentury | 2000 |
PublicationDate | 2011-10-01 |
PublicationDateYYYYMMDD | 2011-10-01 |
PublicationDate_xml | – month: 10 year: 2011 text: 2011-10-01 day: 01 |
PublicationDecade | 2010 |
PublicationPlace | New York, NY |
PublicationPlace_xml | – name: New York, NY – name: New York |
PublicationTitle | IEEE electron device letters |
PublicationTitleAbbrev | LED |
PublicationYear | 2011 |
Publisher | IEEE Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: Institute of Electrical and Electronics Engineers – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref13 ref12 ref15 ref14 ref11 ref10 ref2 ref1 ref8 ref7 ref9 ref4 ref3 ref6 ref5 |
References_xml | – ident: ref5 doi: 10.1889/1.3256478 – ident: ref10 doi: 10.1002/pssc.200779300 – ident: ref13 doi: 10.1109/LED.2009.2039634 – ident: ref2 doi: 10.1889/1.3069740 – ident: ref8 doi: 10.1143/JJAP.48.100202 – ident: ref6 doi: 10.1063/1.2963978 – ident: ref9 doi: 10.1143/JJAP.50.024104 – ident: ref1 doi: 10.1109/LED.2008.2006637 – ident: ref11 doi: 10.1063/1.3464964 – ident: ref12 doi: 10.1109/TED.2010.2072926 – ident: ref15 doi: 10.1021/jp1038305 – ident: ref3 doi: 10.1109/IEDM.2009.5424389 – ident: ref4 doi: 10.1002/adfm.200801032 – ident: ref7 doi: 10.1149/1.2978961 – ident: ref14 doi: 10.1063/1.3510471 |
SSID | ssj0014474 |
Score | 2.1580896 |
Snippet | The effect of the active layer thickness ( T IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift (Δ VT ) in amorphous InGaZnO (a-IGZO)... The effect of the active layer thickness [Formula Omitted] on the negative bias stress (NBS)-induced threshold voltage shift [Formula Omitted] in amorphous... The effect of the active layer thickness ( T rm IGZO ) on the negative bias stress (NBS)-induced threshold voltage shift ( Delta V T ) in amorphous InGaZnO... |
SourceID | proquest crossref pascalfrancis ieee |
SourceType | Aggregation Database Index Database Publisher |
StartPage | 1388 |
SubjectTerms | Active layer thickness amorphous InGaZnO (a-IGZO) TFTs Applied sciences Bias Computer simulation density-of-states (DOS) Disk operating system (DOS) Electronics Exact sciences and technology Hysteresis Instability Lighting Logic gates negative bias stress (NBS)-induced instability NIST Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solvents Stress Thin film transistors Transistors |
Title | The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors |
URI | https://ieeexplore.ieee.org/document/6012505 https://www.proquest.com/docview/913126259 https://search.proquest.com/docview/1671307889 |
Volume | 32 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwEB61PcEBKAURCpWRuCCRre043vi4QJcKteVAK1VcIsePsipNENk9wLV_vGM7G7XAgVukifKYcWa-ycx8BnjdGG48K01OhbWYoDiRa210biuMDsZbP1VhwPn4RB6eiU_n5fkGvB1nYZxzsfnMTcJhrOXbzqzCr7J9TB5CxN6EzYryNKs1VgyESIzLGCHRr9CxJEnV_tHBh8TVyQOYD1D3VgiKe6qEjkjdo1J82s3iL8cco838IRyvnzM1mVxOVstmYn7_QeH4vy_yCB4MsJPM0jrZhg3XPob7t8gId-AaVwxJZMak8wSBIZlFZ0iONOJycvptYS6DYyRdG6Un7iKyhpN3C92TL3HoJA9bgRhnSWhCSBTgv8iiJbOrDg3arXoUfNRf28_hcm0-X3y_IjFcRraS_gmczQ9O3x_mwxYNuSnKYplLrVQjEEJaamjg-kI0JatQI-ZG-rKYOkzgPNOF1YJqI2nVTKVgvCmd4Nz74ilstV3rngGpmkpw62TgThVOlUoJwzSGS8m5apjO4M3aavWPxMRRxwyGqhotXAcL14OFM9gJSh_PG_Sdwd4dM49yLqaInJnKYHdt93r4lvtasYLxkCZm8GqU4kcYKiu6dai6mknM9RFsVer5v--8C_f4unmQvYCt5c-Ve4loZtnsxWV8A7jl8OA |
link.rule.ids | 315,786,790,802,27955,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Lb9QwEB6VcoAeeJWqoVCMxAWJbG3HceLjAl0W2F0ObKWKS-TYDqxKE0R2D3DljzN2slF5HLhFmiiPGWfmm8zMZ4CnpeGmYqmJqbAWExQnYq2Njm2O0cFUtsqUH3CeL-T0TLw9T8934PkwC-OcC81nbuQPQy3fNmbjf5WdYPLgI_Y1uI5xnmbdtNZQMxCi41zGGImehQ5FSapOZqevOrZO7uG8B7tXglDYVcX3ROoW1VJ1-1n85ZpDvJnchvn2Sbs2k4vRZl2OzI8_SBz_91XuwK0eeJJxt1Luwo6r78HeFTrCffiJa4Z0dMakqQhCQzIO7pDMNCJzsvy8MhfeNZKmDtKF-xR4w8mLlW7JhzB2EvvNQIyzxLchdCTg38mqJuPLBk3abFoUvNYf6_f-cnU8WX25JCFgBr6S9j6cTU6XL6dxv0lDbJI0WcdSK1UKBJGWGurZvhBPydxXibmRVZpkDlO4iunEakG1kTQvMykYL1MnOK-q5AB266Z2h0DyMhfcOunZU4VTqVLCMI0BU3KuSqYjeLa1WvG14-IoQg5DVYEWLryFi97CEex7pQ_n9fqO4Pg3Mw9yLjLEzkxFcLS1e9F_zW2hWMK4TxQjeDJI8TP0tRVdO1RdwSRm-wi3cvXg33d-DDemy_msmL1ZvDuCm3zbSsgewu7628Y9QmyzLo_Dkv4FjzX0NA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+Effect+of+the+Active+Layer+Thickness+on+the+Negative+Bias+Stress-Induced+Instability+in+Amorphous+InGaZnO+Thin-Film+Transistors&rft.jtitle=IEEE+electron+device+letters&rft.au=Kong%2C+Dongsik&rft.au=Jung%2C+Hyun-Kwang&rft.au=Kim%2C+Yongsik&rft.au=Bae%2C+Minkyung&rft.date=2011-10-01&rft.issn=0741-3106&rft.eissn=1558-0563&rft.volume=32&rft.issue=10&rft.spage=1388&rft.epage=1390&rft_id=info:doi/10.1109%2FLED.2011.2161746&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0741-3106&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0741-3106&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0741-3106&client=summon |