Field-induced junction in InSb gate-controlled diodes

InSb gate-controlled diodes were fabricated to study breakdown behavior and surface effects. I - V characteristics were measured as a function of gate voltage and temperature. The results indicated that a field-induced junction was formed as the negative bias exceeded -4 V. The field induced junctio...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 1A; pp. L1 - L3
Main Authors LAN, W. H, TU, S. L, CHERNG, Y. T, PANG, Y. M, YANG, S. J, HUANG, K. F
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1991
Subjects
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Breakdown voltage
Semiconductor materials
Diode
Junction
Experimental study
Indium Antimonides
Inorganic compound
Surface
Online AccessGet full text

Cover

More Information
Summary:InSb gate-controlled diodes were fabricated to study breakdown behavior and surface effects. I - V characteristics were measured as a function of gate voltage and temperature. The results indicated that a field-induced junction was formed as the negative bias exceeded -4 V. The field induced junction was found to have a breakdown voltage smaller than that of the metallurgical junction. Saturation of the breakdown current in the field-induced junction was also observed, which could be explained by the conducting channel effect similar to that in the metal oxide semiconductor field effect transistor (MOSFET). The reverse current was also measured as a function of temperature to study the leakage mechanism. The strong exponential temperature dependence suggested that the reverse current was dominated by the G-R mechanism.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1