Plasma immersion ion implantation for SOI synthesis : SIMOX and ion-cut

• Published in: Journal of electronic materials Vol. 27; no. 9; pp. 1059 - 1066
• Main Authors: LU, X, SUNDAR KULAR IYER, S, JIN LEE, DOYLE, B, ZHINENG FAN, CHU, P. K, CHENMING HU, CHEUNG, N. W
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.09.1998; Springer Nature B.V
• Subjects: Applied sciences; Chemical synthesis; Electron micrographs; Electronics; Exact sciences and technology; Finite element method; Fracture mechanics; Fracture toughness; High temperature; Hydrogen plasma; Ideal gas; Internal pressure; Ion implantation; Microelectronic fabrication (materials and surfaces technology); Oxygen plasma; Plasma; Secondary ion mass spectrometry; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Separation; Silicon; Silicon dioxide; Silicon substrates; SIMOX (semiconductors); Single crystals; SOI (semiconductors); Submerging; Surface layers; Silicon on insulator technology; Plasma; Microelectronic fabrication; Ion implantation; Oxygen; Fracture mechanics; SIMOX technology; Hydrogen; Silicon; Immersion; Thermal annealing

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter...