Investigation on spontaneous recombination mechanisms in GaN based laser diodes under low injection current

This study works on the spontaneous recombination mechanisms of GaN-based laser diodes (LDs) under low injection current by examining their power–current (P–I) curves and electroluminescence spectra. Our investigation focuses on the behavior of differential efficiency in LDs under low injection curr...

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Bibliographic Details
Published inAIP advances Vol. 14; no. 5; pp. 055303 - 055303-6
Main Authors Chen, Zhenyu, Liang, Feng, Wang, Xiaowei, Yang, Jing, Zhao, Degang
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.05.2024
AIP Publishing LLC
Subjects
Carrier recombination
Efficiency
Gallium nitrides
Injection current
Semiconductor lasers
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Summary:This study works on the spontaneous recombination mechanisms of GaN-based laser diodes (LDs) under low injection current by examining their power–current (P–I) curves and electroluminescence spectra. Our investigation focuses on the behavior of differential efficiency in LDs under low injection current, revealing that a competition between impurity-related yellow emissions and band-edge blue emissions leads to a change in total luminescence efficiency. Using both experimental and simulating methods, the yellow emission peak is primarily attributed to carrier recombination in deep-level defects located on the LD's p-side. A detailed explanation to the differential efficiency changing mechanism is beneficial to improve the GaN-based LD performance in future fabrication.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0200334