Chemical composition, charge trapping, and memory properties of oxynitride films for MNOS devices
Oxynitride films make a better gate dielectric than Si sub 3 N sub 4 . O content increases with N sub 2 O flow rate, resulting in fewer trapped holes and trapped electrons. Endurance of MNOS nonvolatile electronically alterable memories increases by an order of magnitude for 10 at.% O sub 2 in the f...
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| Published in | Journal of the Electrochemical Society Vol. 137; no. 11; pp. 3589 - 3596 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Pennington, NJ
Electrochemical Society
01.11.1990
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Oxynitride films make a better gate dielectric than Si sub 3 N sub 4 . O content increases with N sub 2 O flow rate, resulting in fewer trapped holes and trapped electrons. Endurance of MNOS nonvolatile electronically alterable memories increases by an order of magnitude for 10 at.% O sub 2 in the films. 31 refs. |
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| AbstractList | Oxynitride films make a better gate dielectric than Si sub 3 N sub 4 . O content increases with N sub 2 O flow rate, resulting in fewer trapped holes and trapped electrons. Endurance of MNOS nonvolatile electronically alterable memories increases by an order of magnitude for 10 at.% O sub 2 in the films. 31 refs. |
| Author | KAPOOR, V. J TURI, R. A BAILEY, R. S |
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| Keywords | Conduction Nitrides Silicon Oxides Mixed Charge carrier trapping Semiconductor device Memory Chemical composition Silicon MNOS structure |
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| Title | Chemical composition, charge trapping, and memory properties of oxynitride films for MNOS devices |
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