Chemical composition, charge trapping, and memory properties of oxynitride films for MNOS devices

Oxynitride films make a better gate dielectric than Si sub 3 N sub 4 . O content increases with N sub 2 O flow rate, resulting in fewer trapped holes and trapped electrons. Endurance of MNOS nonvolatile electronically alterable memories increases by an order of magnitude for 10 at.% O sub 2 in the f...

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 137; no. 11; pp. 3589 - 3596
Main Authors KAPOOR, V. J, BAILEY, R. S, TURI, R. A
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.11.1990
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Conduction
Nitrides Silicon Oxides Mixed
Charge carrier trapping
Semiconductor device
Memory
Chemical composition
Silicon
MNOS structure
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Summary:Oxynitride films make a better gate dielectric than Si sub 3 N sub 4 . O content increases with N sub 2 O flow rate, resulting in fewer trapped holes and trapped electrons. Endurance of MNOS nonvolatile electronically alterable memories increases by an order of magnitude for 10 at.% O sub 2 in the films. 31 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2086273