Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

• Published in: Advanced intelligent systems Vol. 4; no. 5
• Main Authors: Pu, Yuchen, Lu, Ziyao, Mou, Hongming, Zhang, Xixiang, Zhang, Xiaozhong
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.05.2022; Wiley
• Subjects: CMOS; Diodes; Electric fields; Electric potential; Electrodes; Electromagnetism; Gates (circuits); Logic; Magnetic fields; magnetic logic; Magnetism; Memory devices; nonvolatile memory; Power consumption; Power management; Voltage; voltage-controlled negative resistance
• ISSN: 2640-4567; 2640-4567
• DOI: 10.1002/aisy.202100157

To solve the von Neumann performance bottleneck, many kinds of magnetic logic devices are proposed. However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal−oxide−semiconductor (CMOS) logic, and moreover, cascading of the devices is difficult. Herein, instead, a new voltage‐dominated magnetic logic‐memory device is proposed, with switching time of 300 ps and power consumption of 150 fJ, representing ≈10 times improvement compared with CMOS logic on the same scale. The device has a reliable output ratio of >3000%, a low working magnetic field of <10 mT, and a low error rate of ≈10−7. Moreover, complex logic operations, such as XOR gates and a full adder, can be realized using this device via cascading. As a result of these advantages, the magnetic logic‐memory device is well suited for practical applications. In the voltage‐dominated magnetic logic‐memory device, by coupling the anomalous Hall effect in magnetic materials and the voltage‐controlled negative resistance (n‐type NDR), four basic Boolean logic operations can be programmed by magnetic bit at room temperature with excellent high‐frequency performance (switching time = 0.3 ns). In addition, complex logic operations (XOR and full adder) can be performed by cascade.