Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

• Published in: Europhysics letters Vol. 45; no. 3; pp. 348 - 353
• Main Authors: Ketata, K, Ketata, M, Koumetz, S, Marcon, J
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.02.1999; EDP Sciences
• Subjects: 66.30.Jt; 71.55.Eq; 81.15.Hi
• ISSN: 0295-5075; 1286-4854
• DOI: 10.1209/epl/i1999-00170-7

The redistribution of the p-type dopant Be during the post-growth rapid thermal annealing in InGaAs layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry technique. The experimental structures consisted of a 2000 Å Be-doped ($3\times 10^{19}\,{\rm cm^{-3}}$) $\rm In_{0.53}Ga_{0.47}As$ layer sandwiched between 5000 Åundoped $\rm In_{0.53}Ga_{0.47}As$ layers. To explain the observed depth profiles, obtained for annealing cycles with time durations of 10 to 240 s and temperatures in the range of 700-$\rm 900 {}^\circ C$, two models of kick-out mechanism, with neutral and singly positively ionized Be interstitial species, have been considered.