Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection

• Published in: IEEE transactions on electron devices Vol. 58; no. 7; pp. 1914 - 1921
• Main Authors: LEE, Jian-Hsing, HUANG, Shao-Chang, SU, Hung-Der, CHEN, Ke-Horng
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capacitance; Devices; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Electrostatic discharge; Electrostatic discharge (ESD); Exact sciences and technology; Layout; MOSFET circuits; Passive components; radio frequency; Resistors; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; silicon-controlled rectifier (SCR); Stress; Thyristors; Transistors; Passive component; radio frequency; silicon-controlled rectifier (SCR); Electrostatic discharge; Protective device; Transistor; Radiofrequency; Controlled rectifier; Trigger; Silicon rectifier; Electrostatic discharge (ESD); Capacitance; High frequency
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2143717

In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.