Modification of a-Si: H Films via Non-linear Femtosecond Laser Pulse Absorption

• Published in: Energy procedia Vol. 60; pp. 90 - 95
• Main Authors: Soleymanzadeh, B., Beyer, W., Luekermann, F., Differt, D., Pfeiffer, W., Stiebig, H.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2014
• Subjects: a-Si:H; Femtosecond Laser Pulse; Laser Crystallization; Laser Crystallization; a-Si:H; Femtosecond Laser Pulse
• ISSN: 1876-6102; 1876-6102
• DOI: 10.1016/j.egypro.2014.12.348

The modification of a-Si:H via non-linear femtosecond laser pulse absorption was studied and the characteristic thresholds for hydrogen diffusion/effusion, crystallization and material ablation were determined. To consider the impact of the hydrogen content on laser materials processing, a-Si:H was deposited at different temperatures (25°C, 200°C, 520°C) resulting in different hydrogen contents (30%, 13%, and <1%). Essential information for device applications such as the degree of crystallization and the Si-H dissociation are obtained from micro-Raman spectroscopy of the laser treated areas. The prospects of a flexible non-linear fs laser material processing of a-Si:H for bulk and surface modification will be discussed.