An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs

• Published in: IEEE transactions on electron devices Vol. 58; no. 9; pp. 2854 - 2861
• Main Authors: Moreno Perez, Enrique, Roldan Aranda, Juan Bautista, Garcia Ruiz, Francisco J., Barrera Rosillo, Domingo, Ibanez Perez, Maria Jose, Godoy, A., Gamiz, F.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Data models; Density; Devices; Electric charge; Electric potential; Electronics; Exact sciences and technology; Logic gates; Mathematical analysis; Mathematical model; Mathematical models; MOSFETs; Poisson equation; Poisson equations; semiconductor device modeling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; silicon devices; thin film devices; Transistors; Electric potential; MOSFET; Thin film device; Poisson equation; GAA transistor; Modeling; MOSFETs; Charge density; thin film devices; Semiconductor device; semiconductor device modeling; Analytical method; silicon devices; Silicon; Analytical solution
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2159222

A new approach to the analytical solution of the 2-D Poisson equation including the inversion-charge density in undoped square gate-all-around metal-oxide-semiconductor field-effect transistors has been developed. We have obtained functions with different degrees of complexity to calculate the electric potential in the devices under study. The results obtained are compared with the data simulated by solving the Poisson equation numerically. A good fit is achieved both for the electric potential and the inversion charge, which are calculated by means of Gauss's law.