Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

• Published in: IEEE electron device letters Vol. 32; no. 10; pp. 1400 - 1402
• Main Authors: Sheu, J. K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W. C., Chen, C. W., Chi, G. C.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Air gaps; Applied sciences; Devices; Electronics; Epitaxial growth; Epitaxial layers; Exact sciences and technology; Gallium nitride; Gallium nitrides; lateral growth; Light emitting diodes; Meetings; Optoelectronic devices; Photonics; Photons; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Si-implanted; Silicon; Substrates; Voids; Performance evaluation; Binary compound; Output power; Growth rate; Air gaps; Active layer; Lateral growth; Gallium nitride; III-V compound; Light emitting diode; Selective growth; Optoelectronic device; Air gap; Void; Si-implanted
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2161454

GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.