Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation

• Published in: IEEE electron device letters Vol. 32; no. 11; pp. 1597 - 1599
• Main Authors: de Andrade, M. G. C., Martino, J. A., Simoen, E., Claeys, C.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bulk; Devices; DTMOS; Dynamic tests; Dynamics; Electronics; Exact sciences and technology; FinFETs; LF noise; Logic gates; low-frequency (LF) noise; Low-frequency noise; Noise; Performance evaluation; Saturation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon on insulator technology; Thresholds; Transistors; triple gate; MOSFET; DTMOS; triple gate; n channel; Dual gate transistor; 1/f noise; low-frequency (LF) noise; Bulk; Comparative study; Self aligned technology
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2166372

The low-frequency (LF) noise in standard n-channel triple-gate bulk FinFETs with and without dynamic threshold operation is, for the first time, experimentally investigated in the linear and saturation regions. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. The LF noise characteristics indicate that the DTMOS FinFET devices can be a promising candidate for analog and RF applications.