Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs

• Published in: IEEE electron device letters Vol. 32; no. 2; pp. 113 - 115
• Main Authors: Chen, W P N, Kuo, J J Y, Pin Su
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Assessments; Devices; Electronics; Exact sciences and technology; Extraction; MOSFET; MOSFETs; Rough surfaces; Scattering; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; Strain; strain silicon; Strontium; Surface morphology; Surface roughness; surface-roughness-limited mobility; Temperature measurement; Transistors; uniaxial; MOSFET; Electric field; Uniaxial stress; Surface scattering; Roughness; PMOS technology; Short channel; strain silicon; Silicon; Phonon scattering; surface-roughness-limited mobility; uniaxial
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2090126

This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (μ SR ) under process-induced uniaxial strain and compares the strain sensitivity between μ SR and phonon-scattering-limited mobility (μ PH ). By an accurate split C-V mobility extraction method, the μ SR of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that μ SR has stronger stress sensitivity than μ PH . Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.