Control synthesis of bismuth sulphide films and their application for laser detectors

• Published in: Materials research bulletin Vol. 107; pp. 54 - 59
• Main Authors: Chao, Junfeng, Li, Menghao, Zhang, Songpeng, Liu, Tianlei, Hu, Jiangpeng, Wang, Shuwei, Lu, Chunlei
• Format: Journal Article
• Language: English
• Published: United States Elsevier Ltd 01.11.2018
• Subjects: Bi2S3films; BISMUTH SULFIDES; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Laser detector; LASERS; MORPHOLOGY; Optoelectronics; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOELECTRIC EFFECT; PHOTON BEAMS; SENSITIVITY; THICKNESS; THIN FILMS; TIN OXIDES; Laser detector; Optoelectronics; Bi2S3films; Photoconductivity
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2018.07.011

Bi2S3 films-based laser detector and its photo-response characteristics. [Display omitted] •Bi2S3 films have been synthesized via a facile hydrothermal process.•We fabricated Bi2S3 films-based laser detectors successfully.•The photoelectric properties were studied upon 450 nm, 650 nm and 850 nm laser beam.•The laser detectors exhibit excellent photoconductive performance.•We found Prolonging the reaction time was beneficial for the photoelectric performance. Herein, we utilize a facile hydrothermal process for the synthesis of Bi2S3 films on the SnO2: F films (FTO) substrate. The structure, surface morphology and thickness of the samples were characterized by variously analysis method. The Bi2S3 films-based laser detectors exhibit excellent linear photocurrent characteristics, good sensitivity to 450 nm, 650 nm and 850 nm laser beam. Prolonging the reaction time was beneficial for the photoelectric performance of the Bi2S3 films-based laser detectors. The photoelectric conversion properties can be improved by optimizing the thickness of the films. The experimental results of this work can provide an additional opportunity for fabricating excellent photoconductive performance laser detectors.