4H-SiC surface energy tuning by nitrogen up-take

• Published in: Applied surface science Vol. 402; pp. 192 - 197
• Main Authors: Pitthan, E., Amarasinghe, V.P., Xu, C., Gustafsson, T., Stedile, F.C., Feldman, L.C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 30.04.2017
• Subjects: N2 plasma exposure; NH3 annealing; NO annealing; SiC; Surface energy; Wettability; Wettability; N2 plasma exposure; SiC; NH3 annealing; NO annealing; Surface energy
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2017.01.073

•Wettability modification of 4H-SiC as a function of nitrogen adsorption is reported.•SiC surface energy was significantly reduced as nitrogen was incorporated.•Modifications obtained were proved to be inert to etching and stable against time.•Variable control of SiC surface provides new opportunities for biomedical applications. Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.