Modeling of a New SOI Bidirectional Bipolar Junction Transistor for Low-Loss Household Appliances

• Published in: IEEE transactions on electron devices Vol. 58; no. 4; pp. 1164 - 1169
• Main Authors: Phung, Luong Viêt, Benboujema, Chawki, Batut, Nathalie, Quoirin, Jean-Baptiste, Schellmanns, Ambroise, Jaouen, Lionel, Ventura, Laurent
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Base shielding; Bidirectional; bidirectionality; bipolar transistor; Computer programs; Current density; current gain; design; Design. Technologies. Operation analysis. Testing; Devices; Doping; Drift; Electronics; Exact sciences and technology; Home appliances; Household appliances; Integrated circuits; Junction transistors; Mathematical models; Power dissipation; reduced surface field (RESURF); Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; silicon on insulator (SOI); Silicon on insulator technology; simulation; Solid modeling; Transistors; Surface field; Base shielding; Bidirectional link; reduced surface field (RESURF); Critical parameter; simulation; Doped materials; bidirectionality; Electromagnetic shielding; Modeling; Bipolar transistor; Silicon on insulator technology; Junction transistors; Software tool; Energy dissipation; Shielding effect; Concentration effect; design; Monolithic integrated circuit; Current gain; silicon on insulator (SOI)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2108658

In this paper, a new monolithic bidirectional bipolar junction transistor with full turn-off control is studied due to technology computer-aided tools. The structure is built on a symmetrical transistor using silicon-on-insulator technology, which functionality relies on reduced surface field and base shielding effects. These concepts allow high drift doping concentrations and a thin and/or lowly doped base. Such a structure is suitable for bidirectional household appliances within a confined environment where power dissipation is a critical parameter.