Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors

• Published in: Nature nanotechnology Vol. 19; no. 7; pp. 955 - 961
• Main Authors: Ahn, Heonsu, Moon, Gunho, Jung, Hang-gyo, Deng, Bingchen, Yang, Dong-Hwan, Yang, Sera, Han, Cheolhee, Cho, Hyunje, Yeo, Youngki, Kim, Cheol-Joo, Yang, Chan-Ho, Kim, Jonghwan, Choi, Si-Young, Park, Hongkun, Jeon, Jongwook, Park, Jin-Hong, Jo, Moon-Ho
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.07.2024; Nature Publishing Group
• Subjects: 140/125; 142/126; 639/301/357/1018; 639/301/357/551; 639/925/357/995; 639/925/927/1007; Angle of reflection; Boundaries; Capacitance; Chemistry and Materials Science; Crystal defects; Crystals; Dislocations; Electron states; Epitaxy; Field effect transistors; Gates (circuits); Grain boundaries; Materials Science; Molybdenum disulfide; Nanotechnology; Nanotechnology and Microengineering; Semiconductor devices; Transistor circuits; Transistors; Twin boundaries

In atomically thin van der Waals materials, grain boundaries—the line defects between adjacent crystal grains with tilted in-plane rotations—are omnipresent. When the tilting angles are arbitrary, the grain boundaries form inhomogeneous sublattices, giving rise to local electronic states that are no...