Atom probe tomography of nitride semiconductors

Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride semiconductors, despite the challenges involved in achieving controlled field evaporation. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes, laser diodes and microwires. In...

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Bibliographic Details
Published inScripta materialia Vol. 148; pp. 75 - 81
Main Authors Rigutti, L., Bonef, B., Speck, J., Tang, F., Oliver, R.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 15.04.2018
Elsevier
Subjects
Atom probe tomography
Condensed Matter
Gallium nitride
High electron mobility transistor
Light emitting diode
Materials Science
Microwire
Physics
High electron mobility transistor
Gallium nitride
Atom probe tomography
Light emitting diode
Microwire
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Summary:Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride semiconductors, despite the challenges involved in achieving controlled field evaporation. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes, laser diodes and microwires. In electronics, it has allowed insights into impurity doping and alloying effects in transistors. Coupled with direct correlative studies using other techniques and theoretical modelling based on the APT data, the availability of three dimensional compositional information on nitride heterostructures has had (and will continue to have) a profound impact on the design and development of devices. [Display omitted]
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2016.12.034